The 80th JSAP Autumn Meeting 2019

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-E310-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 1:15 PM - 7:00 PM E310 (E310)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

6:00 PM - 6:15 PM

[19p-E310-17] Growth and characterization of highly Si-doped GaN (2021) epitaxial films

〇Soichiro Morikawa1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,2 (1.IIS,UTokyo, 2.JST-ACCEL)

Keywords:GaN