[19p-E311-1~14] 6.3 Oxide electronics

[19p-E311-13] Atomic layer deposition of high purity Ga₂O₃ thin films using liquid precursor (GaCp *)

〇Fumikazu Mizutani¹, Shintaro Higashi¹, Mari Inoue², Toshihide Nabatame² (1.Kojundo Chem. Lab., 2.NIMS)

Keywords:atomic layer deposition, gallium oxide

Using liquid pentamethylcyclopentadienyl gallium (GaCp*) as a precursor and a combination of water and oxygen plasma as oxidizing reactants, gallium oxide thin films were deposited by atomic layer deposition at a growth temperature of 200 ° C. Analyzing the elemental depth profile of the obtained gallium oxide thin film by D-SIMS, it was demonstrated that the film is a high purity film with extremely low carbon contamination.