[19p-E315-1~7] 13.9 化合物太陽電池

▲ [19p-E315-3] Influence of Rubidium Treatment on the Electronic Properties of Cu(In,Ga)Se2 Solar Cells with Different Ga Content

〇(M2)Hamidou Tangara¹、Jennifer Not^1,2、Jakob Schick^3,1、Setareh Zahedi-Azad³、Alban Lafuente Sampietro¹、Roland Scheer³、Takeaki Sakurai¹ (1.Univ. Tsukuba、2.Univ. Grenoble Alpes、3.MLU Halle-Wittenberg)

キーワード：CIGS solar cells, Rubidium treatment, Transcient Photo-Capacitance

Recently, Cu(In, Ga)Se2 solar cells have reached a conversion efficiency of 22%. To achieve such a high performance, Alkali-Post Deposition Treatment (PDT) has been proven necessary. Consequently, the effects of Alkali-PDT have been widely investigated over the past years and it is known that the efficiency and the open-circuit voltage (Voc) increase following the Alkali treatment. So far, Rubidium(Rb) has shown the most promising results. Nevertheless, the influence of Rubidium on defects inside CIGS cells and thus on the device performance is still not fully understood. In this work, we investigate the impact of RbF-PDT on CIGS samples with different [Ga]/([Ga]+[In]) ratio or GGI(namely 0.3, 0.6 and 0.7 with a deviation of +/- 0.03 ).
We focused mainly on the properties of deep-level defects in CIGS before and after RbF- PDT