2019年第80回応用物理学会秋季学術講演会

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9 応用物性 » 9.2 ナノ粒子・ナノワイヤ・ナノシート

[19p-E317-1~20] 9.2 ナノ粒子・ナノワイヤ・ナノシート

2019年9月19日(木) 13:15 〜 18:45 E317 (E317)

深田 直樹(物材機構)、加納 伸也(産総研)、金 大貴(大阪市大)

17:30 〜 17:45

[19p-E317-16] Hierarchical Assembly of Colloidal Lead Chalcogenide Nanocrystals for High Carrier Accumulation in Electrical Double Layers Capacitor

〇(D)Ricky Dwi Septianto1,2、Liming Liu3、Ferry Iskandar4、Nobuhiro Matsushita2、Yoshihiro Iwasa1,3、Satria Zulkarnaen Bisri1,2 (1.RIKEN CEMS、2.Tokyo Inst. of Tech.、3.The Univ. of Tokyo、4.Bandung Inst of Tech)

キーワード:Nanocrystal assembly, Charge carrier accumulation, Hierarchical porous structure

The solution-processable semiconductor colloidal nanocrystals (NCs) offers attractive properties beyond their bulk which is attributed to the size-dependent band-gap due to the quantum confinement effect of the electron wave function. Moreover, the finite density of state (discrete energy level) of NCs materials can emerge the formation of quantum capacitance that has a much higher value compared to the bulk capacitance. Here we demonstrate the measurement of the carrier accumulation on the controllable crosslinked assembly of colloidal lead sulfide (PbS) NCs.The morphology of the PbS NCs assembly was controlled by different deposition methods which provide a superlattice to the hierarchical porous structure of the NCs assembly by liquid/air interfacial assembly and dip-coating method, respectively. The carrier accumulation at the interface of ionic-liquid/NCs assembly was evaluated by electrolyte-gated field effect transistor (FET) through the displacement current measurement (DCM) and cyclic voltammetric measurement of electrical double layer (EDL) capacitor structure.