2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(ポスター講演)

3 光・フォトニクス » 3.12 ナノ領域光科学・近接場光学

[19p-PA6-1~28] 3.12 ナノ領域光科学・近接場光学

2019年9月19日(木) 16:00 〜 18:00 PA6 (第一体育館)

16:00 〜 18:00

[19p-PA6-6] Quality evaluation of WS2 monolayer with Raman scattering

〇(D)Byeong Geun Jeong1、Chanwoo Lee1,2、Sung Hyuk Kim1、Dong Hyun Kim1、Mun Seok Jeong1,2 (1.Sungkyunkwan Univ.、2.Inst. for Basic Science)

キーワード:WS2, Confocal Raman Scattering, Tip enhanced Raman Scattering

Two-dimensional transition metal dichalcogenides(TMDs) are known to have remarkable optical and electrical properties which makes them be promising materials for optoelectronic and nanoelectronic devices. The performance of TMDs is expected to be easily affected by the defect density. However, defect-related Raman studies of TMDs are rarely done. In the case of tungsten disulfide(WS2), recently, a study of the defect-related Raman scattering like D mode of graphene has been reported. Here, we controlled the density of vacancies in monolayer WS2 and identified the relationship between the amount of vacancy and Raman mode of WS2. The quantifying of the vacancy through D mode of WS2 can be utilized to characterize the quality of monolayer WS2