[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

[19p-PB3-11] Electrical Properties of GaN HEMT with AlGaN Back Barrier on Si Substrate

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

Keywords:GaN HEMT, High Resistivity Si Substrate, AlGaN Back Barrier