Takuya Hoshi

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[19p-PB3-11] Electrical Properties of GaN HEMT with AlGaN Back Barrier on Si Substrate

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)