[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

[19p-PB3-12] Dependence of AlGaN/GaN contact-resistance reduction effect
on the partially-thin AlGaN area design

〇Yasuki Kimura¹, Shinnosuke Hisanaga¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech.)

Keywords:HEMT, contact, GaN