The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[19p-PB3-13] Effects of forming gas annealing on electrical properties of
Pt/ALD-Al2O3/AlGaN/GaN MIS-HEMTsⅡ

Nobuki Yoshida1, Keita Furuoka1, Toshiharu Kubo1, Takashi Egawa1 (1.Nagoya Inst. of Tech)

Keywords:semiconductor, GaN

ゲート金属にPtを用いた作製したPt/ALD- Al2O3/AlGaN/GaN MIS-HEMTに対し、フォーミングガス雰囲気中でのゲート金属形成後の熱処理(FG-PMA)がデバイスに及ぼす電気特性、化学的特性への影響の評価