[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

[19p-PB3-18] Distribution of the H_d (E_v+0.88 eV) trap concentration in a p-GaN wafer grown by MOVPE on GaN

〇(M1)Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:p-GaN

We studied a distribution of the hole trap Hd (Ev+0.88 eV) concentration in a p-GaN wafer grown by MOVPE using isothermal DLTS at room temperature. Carbon concentration measured by SIMS showed an increase from the center to the edge. An increase in H¬d trap concentration along the radial direction was observed. This radial distribution was consistent with that of carbon.