[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

[19p-PB3-6] Surface morphology of n-GaN/i-GaN on Si after dry etching

〇Moe Okamoto¹, Yuuki Moriyama¹, Satoko Shinkai¹ (1.Kyukou Univ.)

Keywords:Gallium nitride