Mapping of structural defects in SiC wafers using scanning internal photoemission microscopy

Kenji Shiojima; Ryo Mastuda; Masashi Kato

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB4 (PB)

1:30 PM - 3:30 PM

[19p-PB4-2] Mapping of structural defects in SiC wafers using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Ryo Mastuda¹, Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Keywords:SiC, Schottky contact, scanning internal photoemission microscopy

We present our experimental results on Schottky contacts on p-6H-SiC wafers to characterize surface defects by using scanning internal photoemission microscopy.