Kenji Shiojima

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

[18p-N302-5] Mapping of N-polar p-type GaN Schottky contacts using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Tomoyuki Tanigawa², Ryuji Katayama², Takashi Matsuoka³ (1.Univ. of Fukui, 2.Osaka Univ., 3.NICHe, Tohoku Univ.)

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB4 (PB)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 3:30 PM

[19p-PB4-2] Mapping of structural defects in SiC wafers using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Ryo Mastuda¹, Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)