[19p-PB8-1~32] 12.4 Organic light-emitting devices and organic transistors

[19p-PB8-16] Controlling Threshold Voltage of Printed Organic Transistors with dual-gate and tri-gate Structures

〇(M1)Hideki Wada¹, Rei Shiwaku^1,2, Takashi Fukuda², Shizuo Tokito¹, Hiroyuki Matsui¹ (1.ROEL, Yamagata Univ., 2.Tosoh Corporation.)

Keywords:organic transistor, threshold voltage, tri-gate structures

In the application of organic thin-film transistors (OTFTs) to integrated circuits, it is important to control the gate threshold voltage appropriately in accordance with the purpose of the circuits. There are still many problems with threshold voltage control in printed OTFTs where polymer insulating films by coating method are used. In this study, we compare three methods to control the threshold voltage of printed OTFTs: impurity doping, dual-gate structure and tri-gate structure, and discuss their advantages and disadvantages in detail.