[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-1] Electronic states in Ar+O₂+H₂ sputtered In–Ga–Zn–O films

〇(D)Yusaku Magari¹, Kentaro Masuda¹, Hisao Makino^1,2, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Center for Nanotech.)

Keywords:Oxide semiconductor, InGaZnO, Hard x-ray photoelectron spectroscopy

The amorphous oxide semiconductor, such as the In–Ga–Zn–O (IGZO) is a promising material for flexible and transparent devices, due to outstanding properties, for example the wide bandgap and high mobility compare with a-Si even deposited at room temperatures. In the previous presentation, we successfully demonstrated that the IGZO thin-film transistors and Schottky diodes at the process temperature of 150 °C by using Ar+O₂+H₂ sputtered IGZO. In this study, we investigated the electric states of hydrogenated IGZO films by hard X-ray photoelectron spectroscopy at SPring-8.