[20a-B31-1~12] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [20a-B31-11] Stability Improvement of Solution Processed Amorphous In-Zn-O Thin-Film Transistors via Low Temperature Solution Processed Passivation

〇(M2)Aimi Syairah Safaruddin¹、Juan Paolo Bermundo¹、Naofumi Yoshida²、Toshiaki Nonaka²、Mami N. Fujii¹、Yasuaki Ishikawa¹、Yukiharu Uraoka¹ (1.NAIST for Nara Institute of Science and Technology、2.MERCK for Merck Performance Materials Ltd.)

キーワード：hybrid organic inorganic passivation, solution process, low temperature

This research aims to improve the stability of amorphous InZnO (a-IZO) thin-film transistors by a hybrid Polysilsesquioxane (P-PSQ) passivation. This passivation materials can be deposited via spin coating technique and can be cured at low temperature due to incorporation of inorganic silica content. P-PSQ materials greatly improve the electrical performance of a-IZO TFTs as well as maintaining the device stability upon stress with positive bias and negative bias stress tests. Additional humidity stress test was conducted at a relative humidity of 95% to investigate the barrier ability of a-IZO and P-PSQ films. TFTs passivated with P-PSQ passivation showed a minimal change after humidity stress test compared to unpassivated a-IZO TFTs. Higher organic constituents in P-PSQ film formed a high crosslinking density that makes the film more hydrophobic compared to IZO film. Overall, employment of P-PSQ passivation help in improving the electrical performance and stability despite annealed at low temperature.