[20a-B31-1~12] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [20a-B31-12] All-Solution Approach to Oxide Thin-Film Transistor Fabrication using Photo-assisted Methods

〇(D)Dianne Cabrejas Corsino¹、Juan Paolo Bermundo¹、Mami Fujii¹、Yasuaki Ishikawa¹、Hiroshi Ikenoue²、Yukiharu Uraoka¹ (1.NAIST、2.Kyushu Univ.)

キーワード：oxide TFT, all-solution process, conductive oxide

This work presents an all-solution processed InZnO (IZO) thin-fim transistor (TFT) fabrication through photoassisted treatments, namely UV and excimer laser irradiation. We fabricated all-solution processed TFTs using IZO as both the channel and the electrode material and fluorinated polysiloxane as the gate insulator with mobility (μ) of up to 40 cm² V^-1 s^-1 after irradiation with UV for 60 mins and excimer laser in vacuum at 120 mJ cm^-2. The high mobility of the TFTs can be attributed to fluorine incorporation from the gate insulator to the channel which can occupy the oxygen vacancies and donate free electrons due to its electronegativity difference with oxygen. The self-aligned TFT structure also enabled the semiconductor-to-conductor conversion of IZO electrodes. Our analyses based on X-ray photoelectron spectroscopy, X-ray diffraction, and scanning transmission electron microscopy suggest oxygen vacancy generation and crystallization in the IZO after UV and excimer laser.