[20a-E201-1~10] 17.3 Layered materials

[20a-E201-4] Properties of MBE-grown valley materials doped with magnetic impurity

〇(M2)Yuki Majima¹, Yuta Kashiwabara¹, Hideki Matsuoka¹, Masaki Nakano^1,2, Yoshihiro Iwasa^1,2 (1.Tokyo Univ., 2.RIKEN CEMS)

Keywords:2D materials, transition-metal dichalcogenide, molecular beam epitaxy

2D materials have drawn more and more attention because of their intriguing physical properties and functionalities. In particular, recent discoveries of intrinsic 2D ferromagnetism have opened up a new research field enabling fundamental studies on magnetism at 2D limit. On the other hand, valley-physics has been well studied so far mainly in transition-metal dichalcogenides (TMDCs) with 2H polytype, where the valley index couples to the spin degree of freedom. This unique feature of the spin-valley coupling in TMDCs enables control of valley degree of freedom by spin (and vice versa). In addition, doping magnetic impurities into valley materials should provide another route to spin-valley-coupled phenomena. We here employ molecular beam epitaxy (MBE), by which we could perform crystal growth in highly non-equilibrium condition. In this work, we report MBE growth of magnetic-impurity-doped valley materials and discuss their structural, electrical, and magnetic properties.