[20a-E215-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [20a-E215-3] Investigation of Photoluminescence property of InP/SOI wafer after bonding experiment using Surface Activated Bonding based on Fast Atom Beam

〇Yuning Wang¹, Moataz Eissa¹, Takuya Mitarai¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2 (1.Tokyo Tech, 2.FIRST)

Keywords:Surface activated bonding, Fast atom beam, Photoluminescence property