[20a-E215-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [20a-E215-3] Investigation of Photoluminescence property of InP/SOI wafer after bonding experiment using Surface Activated Bonding based on Fast Atom Beam

〇Yuning Wang¹、Moataz Eissa¹、Takuya Mitarai¹、Tomohiro Amemiya^1,2、Nobuhiko Nishiyama^1,2 (1.Tokyo Tech、2.FIRST)

キーワード：Surface activated bonding, Fast atom beam, Photoluminescence property