[20a-E215-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [20a-E215-5] Computational Field Analysis of Bulk-Slotted Gold based Hybrid Plasmonic SOI Ring Resonator

〇(D)Ritu Raj Singh^1,2、Soumya Kumari³、Vishnu Priye² (1.Presidency Univ.、2.IIT (ISM) Dhanbad、3.IIT Kanpur)

キーワード：Hybrid Plasmonic SOI Ring Resonator, Plasmonic Photonic Integrated Circuit, Bulk-Slotted Plasmonic waveguide

The electromagnetic excitations propagating along the interface between dielectric and metal having evanescent field confinement in the direction perpendicular to the interface has been analyzed for hybrid plasmonic ring waveguide. A plasmonic ring waveguide based on Silicon-on-insulator technology is taken into consideration consisting of a 220 nm vertical height fabrication technology. The ring structure comprises of a bulk Gold (Au) material at the central ring cavity with a slot adjacent to silicon material is analysed for its field and intensity propagation. The evaluated values of 3dB bandwidth, FSR, Finesse and Quality factor are 3.4nm, 25nm, 7.35 and 454.70, respectively.