[20a-E216-7~13] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

〇(M2)Fumiaki Shimohashi¹、Bao Nguyen¹、Michihiko Yamanouchi²、Tetsuya Uemura¹ (1.IST, Hokkaido Univ.、2.RIES, Hokkaido Univ.)

キーワード：spintronics, spin-orbit-torque

Spin-orbit-torque (SOT) induced magnetization switching has recently attracted much interest as an important basic technology for next-generation spintronic devices. MnGa is a promising electrode material for such spintronic devices owing to relatively large perpendicular magnetic anisotropy (PMA), relatively small saturation magnetization, and relatively high spin polarization. However, since it is not easy to fabricate ultra-thin MnGa layer with clear PMA, demonstration of the SOT magnetization reversal has been limited to for MnGa grown on CoGa-buffered MgO substrate, or on GaAs substrate. In this study, we observed clear PMA and demonstrated the SOT magnetization reversal for a 1-nm-thick MnGa grown on a NiAl buffer layer.