[20a-E216-7~13] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

〇Samik Duttagupta^1,2,3、Aleksandr Kurenkov^1,2,3、Oleg Tretiakov⁶、Gunasheel Krishnaswamy⁷、Giacomo Sala⁷、Viola Krizakova⁷、Francesco Maccherozzi⁸、Sarnjeet Dhesi⁸、Pietro Gambardella⁷、Shunsuke Fukami^1,2,3,4,5、Hideo Ohno^1,2,3,4,5 (1.CSIS, Tohoku Univ.、2.CSRN, Tohoku Univ.、3.RIEC, Tohoku Univ.、4.CIES, Tohoku Univ.、5.WPI-AIMR, Tohoku Univ.、6.School of Physics, UNSW、7.D-MAT, ETH Zurich、8.Diamond Light Source)

キーワード：Antiferromagnetic spintronics, Spin-orbit Torques

Utilization of antiferromagnets (AFMs) as active components of spintronic devices offers unique advantages complementing current ferromagnet (FM) based spintronic architectures. The capability of electrical writing and reading is crucial for the development of AFM-based spintronic devices. One of the possible candidates satisfying the requirement is Mn-based metallic alloys. In our previous work, we have demonstrated magneto-resistive effects in an AFM/heavy-metal (HM) PtMn/Pt structure, which offers electrical reading of stored information without auxiliary FMs. Here, we demonstrate electrical writing of PtMn/Pt structure from dc down to µs-regime. Comparison of switching characteristics on AFM/HM with control structures suggests switching of AFM originating from spin-orbit torques under the injection of current. A combination of electrical measurements with X-ray magnetic imaging shows a reorientation of antiferromagnetic Néel vector upon the application of currents.