[20a-E216-7~13] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

〇Shinji Isogami¹、Youhei Shiokawa²、Atsushi Tsumita²、Tomohiro Taniguchi³、Seiji Mitani¹、Tomoyuki Sasaki²、Masamitsu Hayashi^1,4 (1.NIMS、2.TDK、3.AIST、4.Univ. of Tokyo)

キーワード：3T-MRAM, current induced spin orbit torque

We have studied the thermal stability factor (Δ) of three terminal MTJs using current and magnetic field induced magnetization switching. We find asymmetric Δ against the current flow direction, which is one of the characteristics we find for the SOT-induced magnetization switching.