[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

△ [20a-E301-12] Effect of heat-treatment on Al₂O₃/p-GaN MOS structure

〇Masaaki Furukawa¹, Mutsunori Uenuma¹, Simon Kotzea², Yasuaki Ishikawa¹, Andrei Vescan², Yukiharu Uraoka¹ (1.NAIST, 2.RWTH Aachen Univ.)

Keywords:Gallium Nitride, p-type, heat treatment

For GaN-based metal-oxide-semiconductor (MOS) devices, controlling the interface state density between the gate dielectric and nitride semiconductor is a key issue. Even though several reports have been made on the electrical properties of p-GaN MOS capacitors, there are still many lingering issues. For example, a large C-V hysteresis was observed, or the accumulation region was not observed . In this study, p-type GaN-based MOS capacitor and Schottky barrier diode (SBD) were fabricated, and the effect of heat treatment on its electrical properties were evaluated.