[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

[20a-E301-2] New instability caused by interface states in wide-bandgap semiconductor devices

〇Atsushi Hiraiwa^1,4, Kiyotaka Horikawa², Hiroshi Kawarada^1,2,3 (1.RONLI, Waseda Univ., 2.FSE, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

Keywords:semiconductor, wide bandgap, interface state

As the well-established SiO₂/Si system is not available, the reduction of interface states is a challenge of wide-bandgap metal-insulator-semiconductor devices. The conventional studies have mostly focused on the effect of the interface states on threshold voltage and carrier mobility. Here, we report a new instability phenomenon that, by capturing holes generated under high-voltage blocking operation, interface states are positively charged and thereby enhance the gate insulator field, causing unexpectedly large leakage current and dielectric breakdown.