[20a-E302-1~13] 13.8 Optical properties and light-emitting devices

[20a-E302-11] Polarization characteristics of THz emissions from Bi₂Te₃/Te striped structure excited by a femtosecond pulsed laser

〇Fumikazu Murakami¹, Kazunori Serita¹, Hiranaru Murakami¹, Rea Dalipi¹, A. Urbas², A. Materna³, M. Buza³, D. Pawlak³, Masayoshi Tonouchi¹, Iwao Kawayama¹ (1.ILE Osaka Univ., 2.AFRL, USA, 3.ITME, Poland)

Keywords:Terahertz, semiconductor