The 80th JSAP Autumn Meeting 2019

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20a-E303-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 10:30 AM - 11:45 AM E303 (E303)

Kenji Yamaguchi(QST)

10:45 AM - 11:00 AM

[20a-E303-2] Effect of substrate annealing conditions on BaSi2 deposition by thermal evaporation

〇(M1)Daisuke Yazawa1, Hara Kosuke1, Yamanaka Junji1, Arimoto Keisuke1 (1.Yamanashi Univ.)

Keywords:Silicide semiconductor, Vapor deposition