Scanning near-field optical microscopy of green-emitting InGaN/GaN multiple quantum wells with different glowth conditions

Ryoga Makio; Junji Gao; Naoya Hayashi; Shota Yuasa; Satoshi Kurai; Narihito Okada; Kazuyuki Tadatomo; Yoshiki Yano; Toshiya Tabuchi; Koh Matsumoto; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-E310-1~10] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2019 9:00 AM - 11:45 AM E310 (E310)

Kazunobu Kojima(Tohoku Univ.), Mark Holmes(Univ. of Tokyo)

9:30 AM - 9:45 AM

[20a-E310-3] Scanning near-field optical microscopy of green-emitting InGaN/GaN multiple quantum wells with different glowth conditions

〇Ryoga Makio¹, Junji Gao¹, Naoya Hayashi¹, Shota Yuasa¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoshiki Yano², Toshiya Tabuchi², Koh Matsumoto², Yoichi Yamada¹ (1.Yamaguchi Univ., 2.TAIYO NIPPON SANSO Corp.)

Keywords:InGaN, SNOM, quantum wells

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