[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO₂/SiC
by photo-assisted C-V measurements

〇(D)Keita Tachiki¹, Kazutaka Kanegae¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, MOSFET