[20a-N304-1~8] 【CS.3】 3.10 光量子物理・技術、3.11 フォトニック構造・現象、9.2 ナノ粒子・ナノワイヤ・ナノシート、11.5 接合、回路作製プロセスおよびデジタル応用、13.6 ナノ構造・量子現象・ナノ量子デバイスのコードシェアセッション

▲ [20a-N304-7] Current-injection quantum-entangled-photon-pair emitter using GaAs quantum dots: Robustness against increasing temperature

〇(P)Neul Ha¹、Takaaki Mano¹、Takashi Kuroda¹、Yoshiki Sakuma¹、Kazuaki Sakoda¹ (1.NIMS)

キーワード：Quantum dots, Quantum entangled photon pair

The development of an electrically driven quantum-entangled-photon-pair emitter is essential for practical applications in a quantum network. In this study, we report high-temperature operating quantum-entangled-photon-pairs emitting diode based on GaAs/AlGaAs quantum dots (QD) on GaAs (111)A. Electroluminescence spectrum of our single QDs showed three lines identified as biexciton, excion, and positively-charged exciton. In coincidence measurements, we confirmed the correlation between biexciton and exciton, which is a proof for the formation of quantum entanglement. The temeprature dependence of the fidelity to the Bell state suggests that the maximum operation temeprature of our device is ~ 65 K, which is limited by the shallow confinement of charge carriers in GaAs/AlGaAs system.