[20a-PB1-1~15] 9.4 Thermoelectric conversion

[20a-PB1-4] Evaluation of thermoelectric and electronic structural properties of bismuth telluride thin films with Te evaporation by heat treatment

〇Susumu Yonezawa¹, Masayuki Takashiri¹ (1.Tokai Univ.)

Keywords:thermoelectrical materials, Bi-Te thin films, first-principles calculation

In this study, we investigated the influence of thermoelectric properties of bismuth telluride thin films with Te evaporated conditions by heat treatment over 300℃. We deposited Bi₂Te₃ thin films by RF magnetron sputtering, followed by the heat treatment. As a result, the electrical conductivity significantly increased at the annealing temperature over 300℃. We adjusted the parameters by structural analysis to use the first-principle calculations. The calculation showed that the band gap in annealing samples disappeared and exhibited a semi-metallic or metallic band structure.