[20a-PB3-1~2] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20a-PB3-1] Cellular Automaton Simulation of Electron Transport in HEMT

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kozo Makiyama², Junji Kotani² (1.AIST, 2.Fujitsu Lab.)

Keywords:semiconductor, HEMT, Simulation

Cellular automaton method is applied to the electron transport analysis in HEMT 2DEG.