[20a-PB4-1~10] 22.1 Joint Session M "Phonon Engineering"

[20a-PB4-2] Seebeck coefficient and phonon transport in Si wire

〇(M1C)Takuto Nogita¹, Yuhei Suzuki¹, Takeshi Aramaki¹, Khotimatul Fauziah¹, Yoshinari Kamakura², Takanobu Watanabe³, Hiroya Ikeda¹ (1.Sizuoka Univ., 2.Osaka Inst. Tech., 3.Waseda Univ.)

Keywords:Si wire, Seebeck coefficient, phonon-drag effect

It is reported that Seebeck coefficient in a Si wire with small cross-sectional area is lower than that in bulk Si due to phonon drag effect. In order to clarify the dependence of a wire size on the phonon drag effect, Seebeck coefficients of Si wires with various cross-sectional area were investigated from the viewpoint of phonon transport. As a result, it is found that the phonon drag part of Seebeck coefficient is reduced since the boundary scattering of a phonon becomes dominant under the cross-sectional area of 0.3 μm².