The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[20p-B12-1~11] 13.9 Compound solar cells

Fri. Sep 20, 2019 1:15 PM - 4:15 PM B12 (B12)

Kentaroh Watanabe(Univ. of Tokyo)

3:45 PM - 4:00 PM

[20p-B12-10] Development of GaAs//InGaAs 2-junction solar cell with surface activated bonding

〇(M2)Takafumi Fukutani1, Kentaroh Watanabe2, Hassanet Sodabanlu2, Yoshiaki Nakano1,2, Masakazu Sugiyama1,2 (1.Tokyo Univ Engineering., 2.Tokyo Univ RCAST)

Keywords:solar cell, multi-junction, surface activated bonding

Surface activated bonding is the method with which we fabricate high efficiency multi-junction solar cell, which have a greater number of junctions than a conventional one. There are still many points of the influence of the process with this method we don't know. This was why we fabricated GaAs//InGaAs 2-junction solar cell which was the simple structure as multi-junction. We measured the I-V characteristic of the cell and confirmed that it operated as multi-junction solar cell.