[20p-B31-1~17] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [20p-B31-4] Investigation of transport property reductions in epitaxial La-doped BaSnO₃ films

〇HaiJun Cho¹、Bin Feng²、Takaki Onozato¹、Mian Wei¹、Anup Sanchela¹、Yuichi Ikuhara²、Hiromichi Ohta¹ (1.Hokkaido Univ.、2.Univ. of Tokyo)

キーワード：Transparent oxide semiconductor, Transport properties, Electron microscopy

La-doped BaSnO₃ (LBSO) exhibits a wide bandgap (~3.5 eV) and high single crystal electron mobility (320 cm² V⁻¹ s⁻¹) at high electron density, which are ideal transparent oxide semiconductor characteristics for optoelectronic applications. However, the mobility observed from LBSO thin films is much lower compared to the single crystal value. Most studies attribute this phenomenon to the threading dislocations from the lattice mismatch between LBSO/substrate, but the threading dislocations do not fully explain the mobility suppression in LBSO films. In this work, we discuss different factors dominating the mobility of LBSO films and the limitations in aiming the single crystal mobility in LBSO films.