The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B31-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 20, 2019 1:45 PM - 6:30 PM B31 (B31)

Takayoshi Oshima(FLOSFIA), Kohei Fujiwara(Tohoku Univ.), Kazuyuki Uno(Wakayama Univ.)

3:00 PM - 3:15 PM

[20p-B31-6] Transparent p-n diodes based on widegap p-type cuprous halides

Takahiro Kondo1, Yuta Tanida1, Syougo Yoshida1, Naoomi Yamada1 (1.Chubu Univ.)

Keywords:p-type widegap semiconductor, p-n diodes, cuprous halides