The 80th JSAP Autumn Meeting 2019

Presentation information

Symposium (Oral)

Symposium (technical) » Applications of new ferroelecric materials for the future electric devices

[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices

Fri. Sep 20, 2019 1:45 PM - 6:00 PM C309 (C309)

Masaharu Kobayashi(Univ. of Tokyo), Masumi Saitoh(Toshiba Memory)

2:15 PM - 2:45 PM

[20p-C309-2] Understanding and future perspectives of negative capacitance FET

Masaharu Kbayashi1,2 (1.VDEC, Univ. Tokyo, 2.IIS, Univ. Tokyo)

Keywords:negative capacitance, ferroelectric

Negative capacitance FET (NCFET) is a promising technology that can realize steep subthreshold swing for ultralow voltage operation. It has been 10 years since the concept was proposed. There are many experimental demonstrations of NCFET in conferences and journals, however, we have not reach yet the conclusive understanding of operation principle. In this talk, I will explain our recent progresses on the physical understanding of NCFET and future perspectives.