The 80th JSAP Autumn Meeting 2019

Presentation information

Symposium (Oral)

Symposium (technical) » Applications of new ferroelecric materials for the future electric devices

[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices

Fri. Sep 20, 2019 1:45 PM - 6:00 PM C309 (C309)

Masaharu Kobayashi(Univ. of Tokyo), Masumi Saitoh(Toshiba Memory)

2:45 PM - 3:15 PM

[20p-C309-3] AI hardware models and circuit architectures toward application of FeFETs as three-terminal analog memory devices

Takashi Morie1, Masataka Harada1, Mitsue Takahashi2, Shigeki Sakai2 (1.Kyushu Inst. Tech., 2.AIST)

Keywords:ferroelectric gate FET, AI processor, Brain-like hardware

強誘電体ゲートトランジスタ(FeFET)をアナログメモリ素子として用いることを想定したAIプロセッサや脳型ハードウェアの演算モデルと回路アーキテクチャの最新成果を解説するとともに,アナログメモリFeFETに要求される素子特性と最新の測定結果を報告する.