The 80th JSAP Autumn Meeting 2019

Presentation information

Symposium (Oral)

Symposium (technical) » Applications of new ferroelecric materials for the future electric devices

[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices

Fri. Sep 20, 2019 1:45 PM - 6:00 PM C309 (C309)

Masaharu Kobayashi(Univ. of Tokyo), Masumi Saitoh(Toshiba Memory)

5:00 PM - 5:30 PM

[20p-C309-9] Less-dissipative and ultrafast-responsive shift current in ferroelectric semiconductors

Masao Nakamura1,2 (1.RIKEN-CEMS, 2.JST-PRESTO)

Keywords:bulk photovoltaic effect, topological current, ferroelectrics

Shift current is a photocurrent observed in materials lacking the inversion symmetry as typified by ferroelectrics. This current originates from the change of the quantum-mechanical phase of electron wave functions upon the optical transition. Shift current is quite different from conventional current induced by electric fields, in that it is less-dissipative, outputs voltage exceeding bandgap, and shows ultrafast responsivity. In this presentation, we will introduce distinctive features of shift current which we experimentally demonstrated, and also discuss the possibility for device application.