The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[20p-C310-1~16] 6.4 Thin films and New materials

Fri. Sep 20, 2019 1:45 PM - 6:00 PM C310 (C310)

Tetsuo Tsuchiya(AIST), Takayuki Ishibashi(Nagaoka Univ. of Tech.)

3:00 PM - 3:15 PM

[20p-C310-6] Electrochromic properties of Mg doped IrO2 films deposited by co-sputtering

Yuna Suga1, Makoto Kashiwagi1, JunJun Jia2, Shin-ichi Nakamura3, Yuzo Shigesato1 (1.Aoyama Gakuin Univ., 2.Waseda Univ., 3.Center for Instrumental Analysis,Aoyama Gakuin Univ.)

Keywords:Iridium oxide, Electrochromism, Co-sputtering

IrO2 is an anodic electrochromic (EC) material, i.e. colored by electrochemical oxidation. It is colored or bleached by changing the valence of Ir between Ir (Ⅲ) and Ir (Ⅳ). IrO2 has been expected to be used for the counter electrode against the excellent cathodic a-WO3 films. However, IrO2 performs much lower coloration efficiency and smaller capacity than the a-WO3 films. Moreover, Ir is very rare and expensive metal. Therefore, mixed oxide should be effective to reduce the amount of Ir. In this study, Mg doped IrO2 films were deposited by rf reactive co-sputtering under various conditions. Mg doped IrO2 films showed larger capacitance and higher coloration efficiency when [Ir / (Ir + Mg)] was about 20 at%. For the comparative purpose, Mg doped NiO films, one of the another famous anodic materials, were also deposited on unheated ITO coated glasses by rf reactive sputtering under various conditions.