2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

3 光・フォトニクス » 3.11 フォトニック構造・現象

[20p-E207-1~15] 3.11 フォトニック構造・現象

2019年9月20日(金) 13:45 〜 18:00 E207 (E207)

浅野 卓(京大)、太田 泰友(東大)、角倉 久史(NTT)

16:15 〜 16:30

[20p-E207-10] Investigation of on-chip excitation of edge-states in GaAs valley phononic crystals by using interdigital electrodes

〇(M2)Zhaoyin Sun1,2、Ingi Kim1,2、Satoshi Iwamoto1,2,3 (1.IIS, Univ. of Tokyo、2.RCAST,Univ. of Tokyo、3.NanoQuine, UTokyo)

キーワード:phononic crystals, topological edge states, piezoelectric effect

Valley phononic crystals (VPnCs), which enable elastic waves to propagate robustly, have attracted much attention in recent years. In particular, VPnCs at the gigahertz range are expected to be useful in various applications including on-chip high-speed signal processing. We have previously reported a design of GaAs-based VPnC and numerically demonstrated the efficient guiding of GHz elastic waves using the topological edge states. For real applications, it is also important to develop a scheme for exciting the edge state on-chip. Piezoelectricity of GaAs can be used for the purpose. Here we numerically demonstrate that the edge state of GaAs VPnC can be excited on chip by using an interdigital transducer (IDT).