[20p-E215-1~6] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonics

▲ [20p-E215-1] [INVITED] Broad gain spectrum InAs/InP quantum-dot materials and their laser devices

〇Tao Yang^1,2 (1.Institute of Semiconductors, CAS、2.Univ. of Chinese Academy of Sciences)

キーワード：Semiconductor laser, Quantum dot

Broad gain spectrum light sources such as widely tunable semiconductor lasers are attractive for a wide range of applications including precision measurement, biomedical treatment, environment monitoring, and fiber-optic communication. Self-assembled quantum dots (QDs) grown in the Stranski-Krastanow mode are ideal candidates for broad gain spectrum medium, which usually have a large inhomogeneous broadening, e.g., the photoluminescence linewidth from the self-assembled InAs/InP QDs is typically greater than 200 nm. This large inhomogeneous broadening is beneficial to broaden the gain spectrum of QD devices. In this talk, I will present our works on the development of broad gain spectrum InAs/InP QD materials and laser devices including ultra-broadband tunable InAs/InP QD external cavity lasers, ultrashort pulse InAs/InP QD single-section mode-locked lasers with high output power, and flat-topped ultrabroad stimulated emission InAs/InP QD lasers.