[20p-E216-8~20] 10.2 スピン基盤技術・萌芽的デバイス技術

△ [20p-E216-17] Gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve

〇(D)李 垂範¹、ロルテ ファビアン¹、大島 諒¹、安藤 裕一郎¹、鈴木 義茂²、小池 勇人³、白石 誠司¹ (1.京大工、2.阪大基礎工、3.TDK)

キーワード：シリコン、スピントランジスタ、スピン注入

In this research, we investigated gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve device. Gate voltage was applied at back side of SOI (Silicon-on-insulator) substrate. Channel conductivity was modified by several orders of magnitudes with applied gate voltage, while spin diffusion length was only two-times modified. It revealed that the control by gate voltage of local spin accumulation voltage was determined by a competition between spin drift effect and the conductivity mismatch. A simple 1-dimensional model with spin-drift diffusion equation described gate voltage dependence of local spin accumulation voltage.