[20p-E216-8~20] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [20p-E216-19] Controlling magnetic proximity effect in CoFe₂O₄/Pt by applying voltage on Pt layer

〇Shoto Nodo¹、Takumi Yamamoto¹、Takashi Yanase²、Toshihiro Shimada²、Taro Nagahama² (1.Hokkaido Univ., CSE.、2.Hokkaido Univ., Eng.)

キーワード：magnetic proximity effect, anomalous Hall effect, spintronics

Recently, the interface of nonmagnetic heavy metal/ferromagnetic insulators (HM/FMI) such as Pt/CoFe₂O₄ has been investigated extensively. Especially, the magnetic proximity effect in HM/FMI has attracted a great deal of attention as the spin manipulation method of nonmagnetic materials. In the Platinum, ferromagnetism via magnetic proximity effect is easily induced because it has the DOS nearly Stoner criterion. Therefore, it is considered that the induced magnetism in Pt could be controlled by modifying the E_F in Pt by voltage. In this study, we report the control of the magnetic proximity effect in Pt by using ionic gate technique.