[20p-E216-1~7] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems

〇Shinji Isogami¹ (1.NIMS)

キーワード：nitride magnetic film, current induced spin orbit torque

We have studied current induced spin orbit torque (SOT) effective fields for the bilayer systems with nitrides such as Fe₄N : ferromagnet/{W, Pt} and Mn₄N : ferrimagnet/Pt. Using the harmonic-Hall voltage measurements, the anomalous Nernst effects (ANE) of the Fe₄N and the SOT effective fields of the Fe₄N and Mn₄N were estimated as functions of measurement temperature (T) and applied fields. The sign reversal of 2nd-harmonic voltage was obtained, which was attributed to the superposition of ANE. SOT characteristics for the nitrides will be summarized.