The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(Univ. of Yamanashi)

4:45 PM - 5:00 PM

[20p-E303-11] Relationship between Ag-dopant concentration and hole concentration in melt grown Mg2Si

Keigo Goushu1, Haruhiko Udono1 (1.Ibaraki Univ.)

Keywords:Mg2Si, melt grown

溶融成長法によって成長したAg添加Mg2Si結晶中のAg濃度と正孔濃度の関係についての報告