Keigo Goushu

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Oral presentation
| 13 Semiconductors
| 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

4:45 PM - 5:00 PM

[20p-E303-11] Relationship between Ag-dopant concentration and hole concentration in melt grown Mg₂Si

〇Keigo Goushu¹, Haruhiko Udono¹ (1.Ibaraki Univ.)