Preparations of AeSi<sub>2</sub> films by a co-sputtering process

Kodai Aoyama; Takao Shimizu; Hideto Kuramochi; Masami Mesuda; Ryo Akiike; Keisuke Ide; Takayoshi Katase; Toshio Kamiya; Yoshisato Kimura; Hiroshi Funakubo

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(Univ. of Yamanashi)

2:15 PM - 2:30 PM

[20p-E303-3] Preparations of AeSi₂ films by a co-sputtering process

〇Kodai Aoyama¹, Takao Shimizu¹, Hideto Kuramochi², Masami Mesuda², Ryo Akiike², Keisuke Ide¹, Takayoshi Katase¹, Toshio Kamiya¹, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Tosoh corporation)

Keywords:silicide, thin film

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Presentation information

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-3] Preparations of AeSi2 films by a co-sputtering process

[20p-E303-3] Preparations of AeSi₂ films by a co-sputtering process