The 80th JSAP Autumn Meeting 2019

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(Univ. of Yamanashi)

2:00 PM - 2:15 PM

[20p-E303-2] Fabrication of n-Ru2Si3/p-Si pn junctions and photoresponse properties

〇Hiroki Nishi1, Kenta Setojima1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech)

Keywords:silicide semiconductor, ruthenium silicide, pn junction

So far, we have fabricated polycrystalline Ru2Si3 thin films with low electron density (~1016 cm-3) and high mobility (~940 cm2/Vs) by magnetron sputtering. Optical evaluation has revealed that the thin film produced exhibits an optical absorption coefficient of alpha> 105 cm-1 in the visible light range [1]. In this study, we fabricated pn junction devices of n-Ru2Si3 / p-Si substrate and evaluated the current-voltage properties and the photoresponse properties.